Uniquify Develops DDR3 IP for Samsung 28nm LPP Process

DDR3 IP Now in Volume Production in Multiple Product Lines

SAN JOSE, CA–(Marketwired – Apr 28, 2015) – Uniquify today announced it developed a DDR3 intellectual property (IP) solution for Samsung Electronics’ power-efficient 28nm LPP foundry process that is now in volume production for multiple product lines, including consumer and mobile applications.

The year-long project required development of DDR3 subsystem IP to deliver the highest possible performance in Samsung’s 28 nanometer LPP process. In silicon, the resulting DDR3 solution was able to deliver performance that was even higher than expected by more than 10%.

Uniquify implemented the DDR3 controller, DDR3 PHY, customized to support a unique address-sharing feature for more flexibility, and DDR3 I/O tuned to the process.

“Our close technical association with Samsung makes us quite proud,” says Josh Lee, chief executive officer of Uniquify, a leading high-performance semiconductor IP and system-on-chip (SoC) design, integration and manufacturing services supplier. “The results of this high-profile project demonstrate the strength of our DDR IP technology and solutions, and our flexibility and willingness to work closely with our partners to deliver solutions optimized for their specific needs. Our underlying technology and flexibility is a great advantage for us as we push the envelope in new DDR technologies such as LPDDR4 and advanced process nodes.”

Today’s SoC designs must be able to support DDR memory interfaces running at multi-GHz clock rates while managing read-write timing margins that are measured in picoseconds. Even a small drift in timing on the DDR interface can cause the DDR memory subsystem to fail and, as a result, the entire system fails.

Uniquify incorporates patented technology in its DDR PHY IP that counteracts the effects of timing shifts due to both static and dynamic variations caused by process, temperature and voltage. Dynamic self-calibrating logic (DSCL) tracks DDR timing at the byte level and automatically centers the sampling point in the middle of the timing window during system operation. Dynamic adaptive bit calibration (DABC) works within the byte lane to automatically adjust for any skew differences between bits. Not only do DSCL and DABC allow the DDR memory interface to be optimized for speed by maintaining the robustness of the timing interface, the Uniquify DDR IP architecture also delivers the smallest footprint and lowest power solution. In the case of the DDR3 IP developed for Samsung’s 28LPP process, the combination of DSCL and DABC allowed the DDR memory performance to be improved by 10% over the required specification.

About Uniquify
Uniquify is a leading developer and supplier of high-performance DDR (double data rate) memory intellectual property (IP) and supplier of ASIC and system-on-chip (SoC) design, integration and manufacturing services. The company’s adaptive DDR subsystem IP, including leading-edge DDR4 and LPDDR4 offerings, delivers the highest performance with the lowest power, smallest area and the best system reliability — a result of its patented self-calibrating technology. Uniquify’s ASIC and SoC “ideas2silicon” services range from specification development and front-end design through physical design and delivery of packaged, tested chips. It offers 65-, 40-, 28-, and 14 nanometer SoC design expertise, integration and manufacturing services to leading semiconductor and system companies worldwide. Uniquify’s headquarters and primary design center is in San Jose, Calif., with additional design and technical sales and support teams in China, India, Japan, Korea and Vietnam. For more information, visit: www.uniquify.com.

ideas2silicon is a trademark of Uniquify. Uniquify acknowledges trademarks or registered trademarks of other organizations for their respective products and services.

For more information, contact:
Bob Smith
(650) 269-8780
Nanette Collins
Public Relations for Uniquify
(617) 437-1822
0 replies

Leave a Reply

Want to join the discussion?
Feel free to contribute!

Leave a Reply

Your email address will not be published. Required fields are marked *